| Popis: |
Carbon doped, p-type, In x Ga 1-x As (0.2 < x < 0.65) epilayers have been grown on InP substrates at relatively low temperature (450°C) using atmospheric pressure organometallic vapor-phase epitaxy (APOMVPE). Excellent morphology was obtained in all cases. After growth van der Pauw-Hall measurements revealed high hole concentrations in the range 8.5 x 10 18 -8.7 x 10 19 cm -3 (highest reported to date for APOMVPE). The effects of growth temperature, V/III ratio and CCl 4 partial pressure on the carrier concentration and mobility are reported. X-ray diffraction reveals excellent crystal quality. Annealing the samples in different ambients at 400-500°C caused no significant variation in the carrier concentration or mobility, i.e. minimal dopant ion passivation was measured. However, reversible hole compensation was measured after annealing at 650°C. This suggests that macroscopic defects probably are associated with carrier compensation. |
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