Ferroelectric capacitors for integrated circuits
| Autor: | A. S. Valeev, V. A. Vasiljev, M. I. Yanovskaya, L.I. Solovjeva, V. I. Petrovsky, K. A. Vorotilov, I. E. Obvinzeva |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Strontium
Materials science business.industry chemistry.chemical_element Integrated circuit Condensed Matter Physics Ferroelectricity Atomic and Molecular Physics and Optics Titanate Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Capacitor chemistry law Barium strontium titanate Optoelectronics Electrical and Electronic Engineering business Microwave Dram |
| Zdroj: | Microelectronic Engineering. 29:41-44 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00112-3 |
| Popis: | The sol-gel processing of a number of ferroelectric films is discussed emphasizing the issues of obtaining electrical properties critical for their applications. The effect of lead excess in solution prepared by the electrochemical techniques on structural and electrical properties of PZT films are discussed. The barium strontium titanate (BST), strontium titanate-zirconate (STZ) and zirconium-stannate titanate (ZST) films were prepared by sol-gel techniques for the use in dynamic random access memories (DRAMs) and millimeter microwave integrated circuits (MMICs). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect