High Efficiency Back-Contact Back-Junction Silicon Solar Cells with Cell Thicknesses of 45 μm, 90 μm, 130μm and 290 μm
| Autor: | Haase, F., Winter, R., Kajari-Schröder, S., Nese, M., Brendel, R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: | |
| DOI: | 10.4229/27theupvsec2012-2ao.2.4 |
| Popis: | 27th European Photovoltaic Solar Energy Conference and Exhibition; 580-585 Reduction in cell thickness is an important option for future cost reductions. This work demonstrates the fabrication of high efficiency back-contact back-junction silicon solar cells and the efficiency dependence on cell thickness as well as on bulk lifetime and base resistivity. We process back-contact back-junction solar cells with a cell area of 3.92 cm2. The cell thickness varies from 45 μm, 90 μm, 130 μm to 290 μm. The 90 μm-thick, the 130 μm-thick and the 290 μm-thick cells are FZ material, whereas the 45 μm-thick cells are monocrystalline epitaxial layers fabricated by the porous silicon process. All cells are processed in one batch. The efficiency of the champion cells are 22.5 % for 290 μm, 22.6 % for 130 μm, 21.1 % for 90 μm and 18.9 % for 45 μm cell thickness. We investigate the loss mechanisms of all cells. Electron transport in the base causes the highest losses in all cells. The power loss decreases with decreasing cell thickness from 2.5 - 0.9 % absolute efficiency loss at 290 - 45 μm-thick cells. |
| Databáze: | OpenAIRE |
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