Enhanced acid leaching of metallurgical grade silicon in hydrofluoric acid containing hydrogen peroxide as oxidizing agent
| Autor: | Jintang Li, Xuetao Luo, Chuanhai Gan, Liuqing Huang, Huixian Lai, Pengfei Xing |
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| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
Reaction mechanism Silicon Chemistry Metallurgy Inorganic chemistry technology industry and agriculture Metals and Alloys chemistry.chemical_element 02 engineering and technology equipment and supplies 021001 nanoscience & nanotechnology complex mixtures Chemical reaction Copper Industrial and Manufacturing Engineering 020501 mining & metallurgy chemistry.chemical_compound Hydrofluoric acid 0205 materials engineering Oxidizing agent Materials Chemistry Leaching (metallurgy) 0210 nano-technology Hydrogen peroxide |
| Zdroj: | Hydrometallurgy. 164:103-110 |
| ISSN: | 0304-386X |
| DOI: | 10.1016/j.hydromet.2016.06.003 |
| Popis: | The effect of hydrogen peroxide as a novel oxidizing agent on purifying metallurgical grade silicon (MG-Si) by leaching with hydrofluoric acid was investigated as a function of temperature, leaching duration, stirring and hydrofluoric acid concentration. It was found that adding oxidizing agent resulted in enhancing the extraction of impurities from MG-Si as compared to that without oxidizing agent, especially for some non-dissolving elements in the acid like copper. After 2 h of leaching MG-Si with an acid mixture composed of 1 mol L− 1 hydrofluoric acid and 2 mol L− 1 hydrogen peroxide, the purity of MG-Si increased from 99.74 to 99.99%, which was higher than 99.97% obtained without hydrogen peroxide addition. Based on cracking shrinking model, the leaching MG-Si with the mixture was under chemical reaction control. Furthermore, to investigate the reaction mechanism on leaching MG-Si, the micro-structural evolutions of MG-Si before and after exposure to each etchants were revealed. |
| Databáze: | OpenAIRE |
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