Polycrystalline GaAs Made by Selective Deposition and Its Optical Properties

Autor:	Hideshi Kawasaki, Yumie Yamazaki, Hiroyuki Tokunaga
Rok vydání:	1992
Předmět:	Photoluminescence Materials science business.industry General Engineering Nucleation General Physics and Astronomy Mineralogy Chemical vapor deposition Substrate (electronics) Amorphous solid Optoelectronics Crystallite Metalorganic vapour phase epitaxy Thin film business
Zdroj:	Japanese Journal of Applied Physics. 31:L1710
ISSN:	1347-4065 0021-4922
Popis:	Polycrystalline GaAs was grown by selective deposition using metalorganic chemical vapor deposition. The nucleation of polycrystalline GaAs took place on a small seed of polycrystalline Si on the substrate and overgrowth proceeded to SiO2 which covered the substrate. The photoluminescence (PL) intensity from polycrystalline GaAs was in inverse proportion to the seed size. When the seed size was 1 µm2, the PL intensity became six times larger than that for the polycrystalline GaAs on the seed size of 64 µm2. We fabricated a light-emitting diode (LED) on the amorphous substrate (SiO2) using polycrystalline GaAs deposited on the 1-µm2-area seed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::893a85e2baf9c8c374345be6d63daa1c https://doi.org/10.1143/jjap.31.l1710 Zobrazit plný text záznamu