Boron diffusion in strained Si: A first-principles study

Autor:	Gyeong S. Hwang, Li Lin, Sanjay K. Banerjee, Taras A. Kirichenko
Rok vydání:	2004
Předmět:	Materials science Diffusion barrier Condensed matter physics Silicon General Physics and Astronomy chemistry.chemical_element Thermal diffusivity chemistry Computational chemistry Saddle point Vertical direction Density functional theory Diffusion (business) Anisotropy
Zdroj:	Journal of Applied Physics. 96:5543-5547
ISSN:	1089-7550 0021-8979
Popis:	We investigate B diffusion in strained Si by using first-principles density functional theory calculations. An enhancement and an anisotropy of B diffusion in biaxial tensile strained Si are found. The diffusion barrier along the strain plane (channel) is decreased while the barrier in the vertical direction (depth) remains unchanged. This anisotropy comes from the orientation dependence of the saddle point in the diffusion pathway. The formation enthalpy of B-I pair also decreases in strained Si. According to our calculations, for strained Si on a Si0.8Ge0.2 buffer layer, which is widely used in strained metal oxide semiconductor field-effect-transistor, an enhancement of B diffusivity along the channel by a factor ∼4 and a factor ∼2 in the vertical direction are expected for typical rapid thermal anneals.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8930e50a69b99a02fc530f4ed2994d67 https://doi.org/10.1063/1.1803630 Zobrazit plný text záznamu