Characterization of deep‐level defects in In1−xGaxAs/InP

Autor:	F. R. Bacher
Rok vydání:	1988
Předmět:	Auger electron spectroscopy Photoluminescence Band gap Impurity Chemistry Analytical chemistry General Physics and Astronomy Mineralogy Crystal growth Thin film Epitaxy Crystallographic defect
Zdroj:	Journal of Applied Physics. 64:708-712
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.341965
Popis:	New characterization data are presented for the deep‐level defects observed in photoluminescence (PL) spectra of InGaAs near 0.1 eV within the band gap. The literature regarding these defects is summarized and compared to the results of this study. Defects are seen to be present in In‐rich, Ga‐rich, and lattice‐matched In1−xGaxAs/InP epilayers. The PL spectra vary depending on alloy composition and crystal growth conditions. PL spectra at 77 K for 0.46
Databáze:	OpenAIRE
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