The Integration of Ge and III-V Materials on GaAs and Si for Post CMOS Applications

Autor:	Ching Yi Hsu, Edward Yi Chang, Shih Hsuan Tang, Yung Hsuan Su, Chien I. Kuo, Hai Dang Trinh, Chia Hua Chang
Rok vydání:	2012
Předmět:	Crystallinity Fabrication Materials science CMOS business.industry Ultra-high vacuum Optoelectronics Mixed-signal integrated circuit Nanotechnology Chemical vapor deposition Epitaxy business Layer (electronics)
Zdroj:	ECS Transactions. 44:715-720
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3694389
Popis:	In the study, the growth of InAs on Si is demonstrated using "interface blocking" technique with SiGe layers as buffer layer. And the growth of high quality Ge film on GaAs is demonstrated using ultra high vacuum chemical vapor deposition (UHVCVD). Both Ge film grown on GaAs and InAs film grown on Si substrate demonstrate high crystallinity and good surface morphology as observed by XRD and AFM. Furthermore, the fabrication process and electric characteristics of Ge/GaAs and InAs/Si is discussed in the study. The developed epitaxial materials systems and device fabrication including InAs on Si, Ge on GaAs are useful for future III-V and Ge integration on Si substrate for next generation high speed low power CMOS as well as for RF/digital mixed signal circuit applications in the future.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::89056b1f23e905723802b529054a7771 https://doi.org/10.1149/1.3694389 Zobrazit plný text záznamu