Ion induced charge collection and SEU sensitivity of emitter coupled logic (ECL) devices
| Autor: | S.J. Hansel, K.B. Crawford, J.F. Kirshman, S.D. Pinkerton, W.R. Crain, Steven C. Moss, S.H. Penzin, R. Koga, M.C. Maher |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Nuclear and High Energy Physics
Engineering Hardware_MEMORYSTRUCTURES business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Electrostatic induction Emitter-coupled logic law.invention Nuclear Energy and Engineering CMOS law Single event upset Logic gate Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering business Common emitter Shift register |
| Zdroj: | IEEE Transactions on Nuclear Science. 42:1823-1828 |
| ISSN: | 1558-1578 0018-9499 |
| Popis: | This paper presents single event upset (SEU) and latchup test results for selected Emitter Coupled Logic (ECL) microcircuits, including several types of low capacity SRAMs and other memory devices. The high speed of ECL memory devices makes them attractive for use in space applications. However, the emitter coupled transistor design increases susceptibility to radiation induced functional errors, especially SEU, because the transistors are not saturated, unlike the transistors in a CMOS device. Charge collection at the sensitive nodes in ECL memory elements differs accordingly. These differences are responsible, in part, for the heightened SEU vulnerability of ECL memory devices relative to their CMOS counterparts. |
| Databáze: | OpenAIRE |
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