| Autor: |
I.T. Suzuki, Tsutomu Hosoda, Ken Shono, Yoshiyuki Ohkura, Motonobu Sato, Hirofumi Watatani, I.Y. Mizushima, I.T. Nakamura, Motoshu Miyajima, S. Otsuka, Shunichi Fukuyama, M. Shiozu, Hideya Matsuyama, T. Kouno |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.. |
| DOI: |
10.1109/iedm.2005.1609302 |
| Popis: |
Stress-induced voiding under vias connected to "narrow" Copper (Cu) lines (SIV-N) was observed, for the first time, using newly prepared test structures which consisted of isolated vias between narrow (0.14 mum-wide) and very long (200 mum-long) 2-level Cu wires. Mechanism of SIV-N is different from that of well-known stress-induced voiding under vias connected to "wide" Cu lines (SIV-W), because SIV-N cannot occur during actual time according to the model that explains SIV-W. In addition, we found the effect of plasma pretreatment of cap dielectrics and cap dielectrics themselves on SIV-N and the other reliability issues, and succeeded in obtaining the condition which satisfied SIV-N, SIV-W and EM |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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