Improved double delta-doped InGaAs/GaAs heterostructures with symmetric graded channel

Autor:	M.J Kao, J. S. Su, Yat June Li, H. M. Shieh, Wei-Chou Hsu
Rok vydání:	1999
Předmět:	Scattering business.industry Transconductance Doping Analytical chemistry Heterojunction Chemical vapor deposition Condensed Matter Physics chemistry.chemical_compound chemistry Ternary compound Optoelectronics General Materials Science Field-effect transistor Thin film business
Zdroj:	Materials Chemistry and Physics. 61:266-269
ISSN:	0254-0584
DOI:	10.1016/s0254-0584(99)00146-7
Popis:	Improved delta-doped (δ-doped) InGaAs/GaAs field-effect transistors by grading both sides of the InGaAs channel are grown by metal-organic chemical vapor deposition. With the In composition linearly varied from x = 0.18 at the GaAs/InGaAs heterointerface to x = 0.25 at center of the InGaAs channel, significantly enhanced mobility due to reduced scattering is achieved when compared to that without graded heterostructure. A distinguishable two-dimensional electron gas from Shubnikov–de Hass (SdH) measurement is observed. Meanwhile, an improved extrinsic transconductance of 300 mS/mm with gate length of 1.2 μm is obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::88ed6842addfcba19c70fa19a4544b53 https://doi.org/10.1016/s0254-0584(99)00146-7 Zobrazit plný text záznamu Full Text from ScienceDirect