Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

Autor:	Alexey V. Redkov, Sh. Sh. Sharofidinov, A. V. Osipov, S. A. Kukushkin
Rok vydání:	2020
Předmět:	010302 applied physics Materials science Physics and Astronomy (miscellaneous) Silicon chemistry.chemical_element Heterojunction 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Exfoliation joint Cracking chemistry.chemical_compound chemistry 0103 physical sciences Silicon carbide Composite material 0210 nano-technology Layer (electronics)
Zdroj:	Technical Physics Letters. 46:539-542
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s106378502006005x
Popis:	The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si(001) and hybrid SiC/Si(001) substrates without cracks has been investigated. It is found that an AlN layer grown on the Si substrate is extended, whereas an AlN layer grown on the hybrid SiC/Si substrate is compressed. The limiting (critical) thickness of the semipolar AlN layer on the Si(001) substrate is determined to be ~7.5 μm. When the film thickness exceeds this value, an ensemble of cracks is formed in the film, leading to its total cracking and exfoliation from the substrate. The semipolar epitaxial AlN films with a thickness of more than 40 μm are grown on hybrid SiC/Si substrates without cracking and exfoliation from the substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::88e77e16558cccdb7d33281126ef8195 https://doi.org/10.1134/s106378502006005x Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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