Silicon nanocrystals from high-temperature annealing: Characterization on device level

Autor:	Florian Schindler, P. Löper, Anke Witzky, Roberto Guerra, A. M. Hartel, Stefano Ossicini, Sergi Hernández, Margit Zacharias, Mariaconcetta Canino, M. Allegrezza, Manuel Schnabel, M. Bellettato, Friedemann D. Heinz, Stefan Janz, Daniel Hiller, J. López-Vidrier, Sebastian Gutsch, Blas Garrido
Rok vydání:	2013
Předmět:	010302 applied physics Materials science Annealing (metallurgy) Nanocrystalline silicon Solid phase crystallization Nanotechnology 02 engineering and technology Surfaces and Interfaces Quantum dot solar cell 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Monocrystalline silicon chemistry.chemical_compound chemistry Quantum dot 0103 physical sciences Materials Chemistry Silicon carbide Electrical and Electronic Engineering Silicon nanocrystals 0210 nano-technology
Zdroj:	physica status solidi (a). 210:669-675
ISSN:	1862-6300
DOI:	10.1002/pssa.201200824
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::88d256d14882b485c538b2fd74c40bda https://doi.org/10.1002/pssa.201200824 Zobrazit plný text záznamu Plný text