Anin situTunable Diode Mounting Topology for High-Power $X$-Band Waveguide Switches

Autor:	P.W. van der Walt, T. Sickel, Petrie Meyer
Rok vydání:	2007
Předmět:	In situ Radiation Materials science business.industry Bandwidth (signal processing) X band Pulsed power Condensed Matter Physics Topology Fractional bandwidth Optics Evanescent mode Optoelectronics Electrical and Electronic Engineering business Microwave Diode
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 55:281-286
ISSN:	0018-9480
DOI:	10.1109/tmtt.2006.889146
Popis:	An in situ tunable diode mounting topology for waveguide switches is presented and utilized to design and fabricate two evanescent-mode X-band switching modules of approximately 15% and 25% fractional bandwidth. The ability of the mounting topology to operate in a high-power environment is verified in an evanescent-mode X-band switch using six packaged p-i-n diodes, successfully reflecting 4 kW of pulsed power
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::88abedf27917c221f6ccc89b75a26b93 https://doi.org/10.1109/tmtt.2006.889146 Zobrazit plný text záznamu