Microstructural study of He+-implanted and thermally annealed silicon-on-sapphire layers
| Autor: | Yu. M. Chesnokova, A. L. Vasiliev, N. E. Belova, S. G. Shemardov, P. A. Aleksandrova |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Materials science Annealing (metallurgy) 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Dissociation (chemistry) Nanopore Crystallography Ion implantation Silicon on sapphire Transmission electron microscopy 0103 physical sciences General Materials Science Composite material 0210 nano-technology |
| Zdroj: | Crystallography Reports. 62:597-601 |
| ISSN: | 1562-689X 1063-7745 |
| DOI: | 10.1134/s1063774517040058 |
| Popis: | The effect of He+ ion implantation and subsequent annealing on the silicon-on-sapphire microstructure is studied by transmission electron microscopy and X-ray diffraction analysis. It is established that He+ ion implantation leads to the formation of defects in the Si layer and α-Al2O3, while subsequent annealing causes dissociation of radiation defects in Si and formation of nanopores in α-Al2O3. The effect of implanted-ion dose and annealing temperature on the parameters of the porous α-Al2O3 layer and structural quality of the Si layer is investigated. |
| Databáze: | OpenAIRE |
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