Theoretical analysis of threshold voltage behaviors of N-channel JMOSFET

Autor:	K.L. Yip, Hei Wong, Y.C. Cheng
Rok vydání:	1993
Předmět:	Materials science business.industry Materials Chemistry N channel Electronic engineering Electrical engineering Electrical and Electronic Engineering Condensed Matter Physics business Electronic Optical and Magnetic Materials Threshold voltage
Zdroj:	Solid-State Electronics. 36:1645-1649
ISSN:	0038-1101
DOI:	10.1016/0038-1101(93)90041-n
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::88a4d50c58b6b0bcf97ba6bbb12a8e7e https://doi.org/10.1016/0038-1101(93)90041-n Zobrazit plný text záznamu