Impact of the split-off band on the tunneling current at metal/heavily-doped p-type SiC Schottky interfaces

Autor:	Takeaki Kitawaki, Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto
Rok vydání:	2023
Předmět:	General Engineering General Physics and Astronomy
Zdroj:	Applied Physics Express. 16:031005
ISSN:	1882-0786 1882-0778
Popis:	Ni/p-type SiC Schottky barrier diodes with various acceptor densities (N A = 5 × 1015 to 3 × 1019 cm−3) are fabricated and the measured current–voltage characteristics are analyzed by numerical calculation of tunneling current. The tunneling current is calculated taking account of multiple valence bands. It is revealed that tunneling of holes in the split-off band, which has a light effective mass (0.21m 0), is the dominant conduction mechanism at metal/heavily-doped p-type SiC Schottky interfaces.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8892f8fd96fc0b4ca1ffdf5d24b3d977 https://doi.org/10.35848/1882-0786/acc30d Zobrazit plný text záznamu