Topographic and electronic studies of wedge-shape surface defects on AlGaAs/GaAs films grown on Ge substrates
| Autor: | J. J. Boeckl, Q. Xu, Steven A. Ringel, Julia W. P. Hsu, John A. Carlin, R. M. Sieg |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Electrostatic force microscope Heterojunction Nanotechnology Crystallographic defect law.invention Scanning probe microscopy law Transmission electron microscopy Optoelectronics Thin film Electron microscope business Surface states |
| Zdroj: | Applied Physics Letters. 75:2111-2113 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.124933 |
| Popis: | Topographic changes and surface contact potential variations near defects on the surface of AlGaAs/GaAs double heterojunction structures grown on Ge substrates are studied using scanning force microscope and electrostatic force microscope. Comparison with transmission electron microscopy results indicates that these surface defects are directly related to stacking faults originated from the GaAs/Ge interface. The surface contact potential inhomogeneities near these defects are consistent with variations in Si dopant concentration. |
| Databáze: | OpenAIRE |
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