Characterization of 4H-SiC PMOSFET with P+ Poly-Si Gate
| Autor: | Chia-Lung Hung, Bing-Yue Tsui |
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| Rok vydání: | 2023 |
| Zdroj: | 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT). |
| DOI: | 10.1109/vlsi-tsa/vlsi-dat57221.2023.10134380 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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