Dielectric Properties of (ZrxTi1-x)O2 Film on Ru/SiO2/Si Substrates Deposited by the Atomic Layer Deposition Using [Zr(OtBu)4 + Ti(OtBu)4] Cocktail Source

Autor:	Jae-soon Lim, Cha-young Yoo, U-In Chung, Sung-tae Kim, Kyu-Ho Cho, Joo-Tae Moon, Ki-chul Kim
Rok vydání:	2006
Předmět:	Atomic layer deposition Materials science Chemical engineering Stereochemistry Dielectric
Zdroj:	ECS Transactions. 1:153-158
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2209265
Popis:	Zr-TiO2 thin films were prepared by the atomic layer deposition using Zr(OtBu)4 and Ti(OtBu)4 cocktail sources. 8- inch Ru/SiO2/Si wafers were used for the substrates. It was found that the composition ratio of Zr and Ti in Zr-TiO2 films was similar to the mixing ratio of the precursors. The dielectric constant of as deposited Zr-TiO2 film was 35, which was 1.5 times higher than that of ZrO2. In addition, the leakage currents of Zr-TiO2 film was several orders lower than those of TiO2. The leakage currents of 100 Aå Zr-TiO2 films were less than 100nA/cm2 at 1.0 V, which satisfied the requirements for the DRAM capacitor
Databáze:	OpenAIRE
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