Investigation of Reverse Recovery Phenomenon for SiC MOSFETs in High Temperature Applications
| Autor: | Cheng Qian, Zhiqiang Wang, Da Zhou, Yuxin Ge, Yimin Zhou, Xingyuan Yan, Guoqing Xin, Xiaojie Shi |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Power Electronics. :1-12 |
| ISSN: | 1941-0107 0885-8993 |
| DOI: | 10.1109/tpel.2023.3273351 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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