| Autor: |
Cyrus E. Tabery, Andre Poock, Stephanie Maelzer, Guido Schnasse, Milko Peikert, Christopher A. Spence, Kaustuve Bhattacharyya, Michael Lang |
| Rok vydání: |
2006 |
| Předmět: |
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| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Mask inspection and qualification is a must for wafer fabs to ensure and guarantee high and stable yields. Single defect events can easily cause a million dollar loss through a defect duplicating onto the wafer. Several techniques and methods for mask qualification within a wafer fab are known but not all of them are neither used nor understood regarding their limitations. Increasing effort on existing tool platforms is necessary to detect the defects of interest which are at the limit of the tools specification - On the other hand next generation tools are very sensitive and therefore consume only a negligible amount of time for recipe optimization. Knowing the limits of each inspection tool helps to balance between effort and benefit. Masks with programmed defects of 90nm and 65nm design rule were used in order to compare the different available inspection techniques. During the course of this technical work, the authors concentrate mainly on two inspection techniques. The first one inspects the reticle itself using KLA-Tencor's SLF27 (TeraStar) and SL536 (TeraScan) tools. As the reticle gets inspected itself this is the so called "direct" mask defect inspection. The second inspection technique discussed is the "indirect" mask defect inspection which consists of printing the pattern on a blank wafer and use KLA-Tencor's bright-field wafer inspection tool (2xxx series) to inspect the wafer. Data of this work will include description of the techniques, inspection results, defect maps, sensitivity analysis, effort estimation as well as limitations for both techniques for the used design rule. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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