Source and Drain Series Resistance Reduction for N-Channel Transistors Using Solid Antimony (Sb) Segregation (SSbS) During Silicidation
| Autor: | Ganesh S. Samudra, Hock-Chun Chin, Hoong-Shing Wong, A.T.-Y. Koh, Yee-Chia Yeo, Lap Chan |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Equivalent series resistance business.industry Schottky barrier Transistor Electrical engineering chemistry.chemical_element Electronic Optical and Magnetic Materials law.invention Antimony chemistry law Parasitic element MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Extrinsic semiconductor |
| Zdroj: | IEEE Electron Device Letters. 29:756-758 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2008.923712 |
| Popis: | We report the first integration of a novel solid antimony (Sb) segregation (SSbS) process in a transistor fabrication flow. A thin solid Sb layer, which acts as a large source of n-type dopants, was deposited beneath a metallic nickel layer prior to source-drain silicidation. Following nickel silicidation, a very high concentration of Sb was incorporated at the NiSi/Si interface. The SSbS process is demonstrated to reduce the effective Schottky barrier (SB) height and parasitic series resistance in an n-channel field-effect transistor, leading to enhanced drive current performance without degradation in the OFF -state leakage current. Performance enhancement is also maintained when the supply voltage is reduced from 1.3 to 0.8 V. |
| Databáze: | OpenAIRE |
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