Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge
| Autor: | Kyoung Hwan Yeo, N. Cho, Sang-Hun Song, Byoung Hak Hong, Jae-Sung Rieh, Luryi Choi, Dong-sik Park, Sungwoo Hwang, Young Chai Jung, Dong-Won Kim, Sul-Hwan Lee, Yun Seop Yu, Kyung Seok Oh, Gyo Young Jin, Keun Hwi Cho |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Silicon business.industry Subthreshold conduction Transistor Nanowire chemistry.chemical_element Nanotechnology Electronic Optical and Magnetic Materials law.invention Planar chemistry law Logic gate Degradation (geology) Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 32:1179-1181 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2011.2159473 |
| Popis: | We measured and analyzed the subthreshold degradation of the gate-all-around (GAA) silicon nanowire field-effect transistors with the length of 300/500 nm and the radius of 5 nm. An analytical model incorporating the effect of interface traps quantitatively explained the measured subthreshold swing (SS) degradation. A simple electrostatic argument showed that the GAA device had smaller degradation of SS values than planar devices for the same interface trap densities. |
| Databáze: | OpenAIRE |
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