Characteristics of dislocations in ZnO layers grown by plasma-assisted molecular beam epitaxy under different Zn∕O flux ratios
| Autor: | Z. Vashaei, Kazuhiro Miyamoto, Hang-Ju Ko, I. Yonenaga, Hiroyuki Kato, Takafumi Yao, Michihiro Sano, Meoung Whan Cho, Agus Setiawan |
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| Rok vydání: | 2004 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 96:3763-3768 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1785852 |
| Popis: | We have investigated the characteristic of the dislocations in the ZnO layers grown on c sapphire by the plasma-assisted molecular beam epitaxy under the different Zn∕O flux ratios. The ZnO layers were characterized by the transmission electron microscopy (TEM) and the high-resolution x-ray diffraction (HRXRD). The TEM and HRXRD experiments revealed that the major threading dislocations (TDs) in the ZnO layers are the edge dislocations running along the c axis with Burgers vector of 1∕3⟨11–20⟩. The TD densities are determined to be 6.9×109, 2.8×109, and 2.7×109cm−2, for O-rich, stoichiometric, and Zn-rich grown ZnO, respectively. Different from the O-rich grown ZnO where the dislocations run along the c-axis, several dislocations in the stoichiometric and the Zn-rich grown ZnO are inclined to 20°∼30° from the c-axis. By considering the slip system in the wurtzite-structure ZnO, the glide planes of the dislocations are close to (10-10) for the O-rich grown ZnO and close to (10-11) for the stoichiometric an... |
| Databáze: | OpenAIRE |
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