Electron Subband Levels of n-Type δ-Doped Quantum Wells under In-Plane Magnetic Fields

Autor:	L. M. R. Scolfaro, A. T. Lino, E. K. Takahashi
Rok vydání:	1997
Předmět:	Physics Brillouin zone Paramagnetism Field (physics) Condensed matter physics Diamagnetism Statistical and Nonlinear Physics Electron Electronic structure Condensed Matter Physics Quantum well Magnetic field
Zdroj:	International Journal of Modern Physics B. 11:1195-1207
ISSN:	1793-6578 0217-9792
DOI:	10.1142/s0217979297000605
Popis:	Self-consistent calculations of the electronic structure of center n-δ-doped GaAs/Al x Ga 1-x As quantum wells under in-plane magnetic fields are presented. The field B is varied up to 20 Tesla for different quantum well widths L w and sheet donor concentrations N D . The magnetic field produces noticeable changes in the energy dispersions along an in-plane direction perpendicular to B. The effects of B are more pronounced for higher electronic subbands. It is found that the diamagnetic shifts increase with increasing L w and/or N D . Contrarily to what has been observed in modulation-doped quantum wells, in these δ-doped systems the electron energy dispersions keep the single conduction band minimum at the center of the Brillouin zone even for intense magnetic fields.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::884f750ad8527a121a968257a0900653 https://doi.org/10.1142/s0217979297000605 Zobrazit plný text záznamu