Spin-Dependent Tunneling In III-V Semiconductors

Autor:	Guy Fishman, Nicolas Rougemaille, Soline Richard, Henri-Jean M. Drouhin
Rok vydání:	2005
Předmět:	Physics Evanescent wave Semiconductor Condensed matter physics business.industry Band gap Physics::Optics Physics::Atomic Physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect business Wave function Spin dependent tunneling Quantum tunnelling
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
Popis:	We calculate evanescent waves in GaAs‐like III‐V semiconductors throughout the forbidden band gap taking into account both the absence of inversion center and the spin‐orbit coupling. We find that the evanescent energy bands are spin‐split and that the evanescent wave functions only exist in limited energy and wave‐vector domains. Such tunnel barriers can be used as solid‐state spin injectors.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::884e22cfe4285dedceb1dc048df1890d https://doi.org/10.1063/1.1994610 Zobrazit plný text záznamu