Deposition of aluminium oxide thin films by reactive magnetron sputtering
| Autor: | Kari Koski, Jorma Hölsä, P. Juliet |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Aluminium oxides
Materials science Metallurgy chemistry.chemical_element Surfaces and Interfaces General Chemistry Sputter deposition Condensed Matter Physics Surfaces Coatings and Films Pulsed laser deposition chemistry.chemical_compound chemistry Aluminium Sputtering Physical vapor deposition Materials Chemistry Aluminium oxide Composite material Thin film |
| Zdroj: | Surface and Coatings Technology. :716-720 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(99)00087-0 |
| Popis: | Aluminium oxide thin films were deposited by direct current (d.c.) reactive magnetron sputtering on glass-slide, silicon wafer, stainless-steel and polycarbonate substrates. The thicknesses of the films were between 200 nm and 3.0 μm. The deposition was controlled by the target voltage to obtain stoichiometric thin films with a high deposition rate. The deposition process was studied in terms of target power, I–U characteristics of the target, sputtering gas pressure and substrate bias voltage. The film properties of interest were O/Al ratio, density, nanohardness, intrinsic stress, crystallographic structure and surface roughness. The deposition rate obtained for stress-free and transparent aluminium oxide thin film was 215 nm min−1, 77% of the rate of metallic aluminium. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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