Transport mechanisms in infinite layer phase compounds grown by molecular beam epitaxy
| Autor: | X. Z. Xu, C. Hatterer, C. F. Beuran, V. Mairet, B. Eustache, C. Deville Cavellin, Michel Laguës, X. M. Xie, P. Laffez, C. Coussot |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Doping Variable-range hopping Crystallographic defect Weak localization Condensed Matter::Materials Science Electrical resistivity and conductivity Condensed Matter::Superconductivity Phase (matter) Condensed Matter::Strongly Correlated Electrons Thin film Molecular beam epitaxy |
| Zdroj: | Applied Physics Letters. 67:1671-1673 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.115052 |
| Popis: | Thin films of infinite layer compounds were prepared by molecular beam epitaxy. Defect layers were incorporated into the structure in order to dope the infinite layer phase. Hole type doping is usually observed. Resistivity measurements show that the conduction mechanisms change gradually with increasing doping level, from activational type to variable range hopping (or a mechanism governed by the Coulomb interaction between localized electrons) and then further to a mechanism related to weak localization which can be described by Δρ=T−S, where the exponent S ranges from 0.5 to 1.5. |
| Databáze: | OpenAIRE |
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