Surface reactions of Ge containing organometallics on Si(100)

Autor:	C. Michael Greenlief, Lori A. Keeling, Debra-Ann Klug, Patricia C. Wankum
Rok vydání:	1992
Předmět:	Chemistry Thermal desorption spectroscopy Analytical chemistry Thermal desorption Surfaces and Interfaces Condensed Matter Physics Decomposition Soft laser desorption Surfaces Coatings and Films chemistry.chemical_compound Adsorption Germane Desorption Digermane
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:2465-2469
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.577985
Popis:	The adsorption and decomposition of germane GeH4 and digermane Ge2H6 on Si(100) have been investigated. Exposure of GeH4 to Si(100) at 110 K results in dissociative chemisorption to GeH3 and H. The adsorption of GeH4 is via a precursor state. Heating to higher temperatures results in the decomposition of GeH3. H2 desorption from GeH4 decomposition exhibits two desorption states. One state is dominated by Si and the second state is influenced by Ge on the surface. The preadsorption of Ge strongly alters the desorption of H2, shifting most of the desorption into the lower temperature state most strongly influenced by Ge. The H2 thermal desorption from the decomposition of Ge2H6 is examined and is qualitatively similar to that of GeH4.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8839acf393c88b876546b069c9837d17 https://doi.org/10.1116/1.577985 Zobrazit plný text záznamu