High-sensitivity extended-gate field-effect transistors as pH sensors with oxygen-modified reduced graphene oxide films coated on different reverse-pyramid silicon structures as sensing heads
| Autor: | Yu Ren Li, Chia Tsung Chang, Po-Yu Yang, Wan Lin Tsai, Yu Kai Chiu, Shih Hsueh Chang, Huang-Chung Cheng |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon Graphene Transistor General Engineering Analytical chemistry Oxide General Physics and Astronomy Linearity chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Oxygen law.invention chemistry.chemical_compound Planar chemistry law 0103 physical sciences Field-effect transistor 0210 nano-technology |
| Zdroj: | Japanese Journal of Applied Physics. 55:04EM08 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.55.04em08 |
| Popis: | A high-performance extended-gate field-effect transistor (EGFET) as pH sensor with its microstructured sensing head composed of an oxygen-modified reduced graphene oxide film (RGOF) on a reverse-pyramid (RP) Si structure was developed to achieve a high sensitivity of 57.5 mV/pH with an excellent linearity of 0.9929 in a wide pH sensing range of 1–13. These features were ascribed to the large amount of sensing sites and large sensing area. In contrast, the planar Si substrate with the oxygen-plasma-treated RGOF (OPT-RGOF) at the optimal bias power showed a sensitivity of 52.9 mV/pH compared with 45.0 mV/pH for that without plasma treatment. It reveals that oxygen plasma can produce oxygen-containing groups as sensing sites, enhancing proton sensing characteristics. However, oxygen plasma treatment at high bias powers would cause damage to the RGOFs, resulting in poor conducting and sensing properties. On the other hand, the use of the RP structures could increase the effective sensing area and further promote the sensing performance. |
| Databáze: | OpenAIRE |
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