Growth mechanism and optical properties of semiconducting Mg2Si thin films
| Autor: | Guido Langouche, John E. Mahan, James Becker, André Vantomme |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Silicon
Annealing (metallurgy) Magnesium business.industry Analytical chemistry chemistry.chemical_element Condensed Matter Physics Magnesium silicide Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Optics chemistry Absorption edge Attenuation coefficient Silicide Electrical and Electronic Engineering Thin film business |
| Zdroj: | Microelectronic Engineering. 50:237-242 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00287-7 |
| Popis: | Reactive deposition of magnesium onto a hot silicon substrate (200–500°C) does not result in any accumulation of magnesium or its silicide — the condensation coefficient of magnesium being zero. On the other hand, co deposition of magnesium with silicon at 200°C, using a magnesium-rich flux ratio, gives a stoichiometric Mg 2 Si film. The number of magnesium atoms which condense is equal to twice the number of silicon atoms which were deposited. The Mg 2 Si layers are polycrystalline with a (111) texture. These stoichiometric silicide films still show a tendency to sublimate; whereas capping with an oxide results in extensive intermixing during annealing. The Mg 2 Si films thus obtained exhibit optical transparency at sufficiently long wavelength, and an absorption edge. Extraction of the absorption coefficient from the data, and analysis of its energy dependence suggest an indirect bandgap of ∼0.74 eV, plus direct transitions at ∼0.83 and ∼0.99 eV. |
| Databáze: | OpenAIRE |
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