| Autor: |
Munaf T. Rahimo, Iulian Nistor, David Green |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. 1062:539-543 |
| ISSN: |
1662-9752 |
| Popis: |
This paper presents a Singular Point Source MOS (S-MOS) cell concept suitable for SiC MOSFETs targeting low conduction losses, low switching losses and high robustness. The S-MOS concept differs from standard Planar or Trench MOS cells in the manner by which the total channel width per device area is determined. For the proof of concept and device electrical performance evaluation, the paper will provide 2D and 3D TCAD simulations results for 1200V SiC MOSFETs including the S-MOS and reference planar and trench structures. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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