Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory
| Autor: | Gyu-Hyun Kil, Yun-Heub Song, Jun-Tae Choi, Kyu-Beom Kim |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Magnetoresistive random-access memory
Computer science business.industry Sense amplifier Reading (computer) 020208 electrical & electronic engineering Spin-transfer torque Electrical engineering 02 engineering and technology Sense (electronics) 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Resistive random-access memory 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering 0210 nano-technology Direct-coupled amplifier business Access time |
| Zdroj: | JSTS:Journal of Semiconductor Technology and Science. 16:31-38 |
| ISSN: | 1598-1657 |
| DOI: | 10.5573/jsts.2016.16.1.031 |
| Popis: | A novel self-reference sense amplifier with parallel reading during writing operation is proposed. Read access time is improved compared to conventional self-reference scheme with fast operation speed by reducing operation steps to 1 for read operation cycle using parallel reading scheme, while large sense margin competitive to conventional destructive scheme is obtained by using self-reference scheme. The simulation was performed using standard 0.18 mm CMOS process. The proposed selfreference sense amplifier improved not only the operation speed of less than 20 ns which is comparable to non-destructive sense amplifier, but also sense margin over 150 mV which is larger than conventional sensing schemes. The proposed scheme is expected to be very helpful for engineers for developing MRAM technology. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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