X-ray diffuse-scattering study of defects in α-sapphire
| Autor: | Krzysztof Pakuła, J. Borowski, E. Zielińska-Rohozińska, J. Gronkowski, Małgorzata Kowalska |
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| Rok vydání: | 2006 |
| Předmět: |
Diffraction
Materials science X-ray Surfaces and Interfaces Condensed Matter Physics Molecular physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reciprocal lattice Crystallography Diffuse scattering Materials Chemistry Sapphire Electrical and Electronic Engineering Dislocation Deposition (law) |
| Zdroj: | physica status solidi (a). 203:3633-3639 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.200622255 |
| Popis: | Strains and defects due to deposition of layered GaN/AlGaN heteroepitaxial structures generated both in α-sapphire substrates and the layers were studied by X-ray high-resolution diffraction and diffuse scattering. Dislocation loops in α-sapphire were identified by calculations of diffuse-scattering intensity in the reciprocal-space maps. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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