Low-Temperature Polycrystalline Silicon Thin-Film Transistors and Circuits on Flexible Substrates
| Autor: | Jihui Lee, James S. Im, P. C. van der Wilt, John R. Abelson, L. Goodman, M.G. Kane, Arthur H. Firester, A. B. Limanov, A. M. Chitu |
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| Rok vydání: | 2006 |
| Předmět: |
chemistry.chemical_classification
Materials science business.industry Annealing (metallurgy) Low-temperature polycrystalline silicon Polymer Condensed Matter Physics Pulsed laser deposition chemistry Thin-film transistor Optoelectronics Microelectronics General Materials Science Crystallite Physical and Theoretical Chemistry business Macroelectronics |
| Zdroj: | MRS Bulletin. 31:461-465 |
| ISSN: | 1938-1425 0883-7694 |
| DOI: | 10.1557/mrs2006.119 |
| Popis: | Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materials with high defect densities. Excimer-laser annealing is capable of producing films of reasonable quality directly on polymer and metallic substrates. Sequential lateral solidification (SLS) is an advanced pulsed-laser-crystallization technique capable of producing Si films on polymers with lower defect density than can be obtained via excimer-laser annealing. Circuits built directly on polymers using these SLS films show the highest performance reported to date. |
| Databáze: | OpenAIRE |
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