Silicon carbide: barriers to manufacturable devices

Autor:	J. Shovlin, P. Shenoy, Richard L. Woodin, G. Dolny, T. Witt
Rok vydání:	2005
Předmět:	chemistry.chemical_compound Materials science chemistry Silicon Hardware_GENERAL Semiconductor materials Wide-bandgap semiconductor Electronic engineering Silicon carbide chemistry.chemical_element Power semiconductor device High voltage Engineering physics
Zdroj:	IEEE/SEMI Conference and Workshop on Advanced Semiconductor Manufacturing 2005..
DOI:	10.1109/asmc.2005.1438790
Popis:	Wide band-gap semiconductor materials are attractive candidates for overcoming the limitations of silicon for high voltage/high power devices. SiC devices are beginning to appear in the marketplace; however there are several significant barriers which must be overcome before SiC can become a mainstream semiconductor material. This paper discussed these barriers, and solutions for overcoming them
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::87f23e85db78c6ced046ff55b4eb7981 https://doi.org/10.1109/asmc.2005.1438790 Zobrazit plný text záznamu