Sequential tunneling transport in GaN/AlGaN quantum cascade structures

Autor:	Anirban Bhattacharyya, Yitao Liao, Lin Zhou, Theodore D. Moustakas, Faisal F. Sudradjat, Kristina Driscoll, Roberto Paiella, Christos Thomidis, Wei Zhang, David J. Smith
Rok vydání:	2012
Předmět:	Condensed matter physics Polarity (physics) Cascade Chemistry Structure design Gan algan Condensed Matter Physics Quantum Quantum tunnelling Voltage
Zdroj:	physica status solidi c. 9:588-591
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.201100423
Popis:	We demonstrate electronic sequential tunneling transport through the ground-state subbands of GaN/Al0.15Ga0.85N quantum cascade structures grown on free-standing GaN substrates. A pronounced transition from a high- to a low-resistance state is observed as the applied voltage is increased. The measured current-voltage characteristics are found to vary with temperature, structure design, and polarity of the applied bias, in a way that is fully consistent with theoretical expectations. The dominant transport mechanism is determined to be scattering-assisted tunneling. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::87ed453c41e3f60ea5361af0ca51217b https://doi.org/10.1002/pssc.201100423 Zobrazit plný text záznamu Plný text