Analysis of ion scattering by thin SiO2 layers in boron implants through SiO2 into silicon

Autor:	Al F. Tasch, S.-H. Yang, Kevin M. Klein, Robert B. Simonton, G. Lux, Changhae Park
Rok vydání:	1992
Předmět:	Materials science Silicon Scattering Silicon dioxide Oxide Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Ion chemistry.chemical_compound Ion implantation chemistry Physics::Plasma Physics Thin film Boron
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1690-1695
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.577771
Popis:	The effects of ion scattering by a silicon dioxide layer on boron distribution profiles implanted through the oxide layer into single‐crystal silicon have been studied. The intensity of ion scattering and the degree of randomization of the directions of the implanted ions have been investigated through observations of a series of boron profiles measured by secondary ion mass spectroscopy (SIMS) analysis. The effectiveness of the oxide layer in randomizing the directions of implanted ions is found to be strongly dependent on the correlation between the ion energy and the oxide thickness. It is also shown by SIMS anaysis that even the total randomization of the direction of the ions does not completely eliminate ion channeling. This study reveals an unexpected effect of ion scattering by screen oxide layers on implant profiles: ion scattering by the oxide layer can cause enhanced channeling and deeper profile depth.
Databáze:	OpenAIRE
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