Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance

Autor: Megha Sharma, Bhavya Kumar, Rishu Chaujar
Rok vydání: 2022
Zdroj: Materials Today: Proceedings. 71:155-159
ISSN: 2214-7853
DOI: 10.1016/j.matpr.2022.08.272
Databáze: OpenAIRE