Cluster and thin layer of compound semiconductor growth on hexagonal and vicinal cubic surface and the simulation of atom behavior

Autor:	A. Mazeikis, V. Kazlauskiene, R. Baubinas, J. Vaitkus, E. Gaubas, A. Zindulis, J. Miskinis, E. Zasinas, J. Sinius
Rok vydání:	1999
Předmět:	Materials science Silicon General Engineering Binary compound chemistry.chemical_element Substrate (electronics) Crystal structure chemistry.chemical_compound Crystallography Adsorption chemistry Crystallite Layer (electronics) Vicinal
Zdroj:	Microelectronics Journal. 30:335-340
ISSN:	0026-2692
DOI:	10.1016/s0026-2692(98)00131-1
Popis:	The thin layer of the II–VI and IV–VI compound growths on crystalline substrates by laser deposition was analyzed. The influence of substrate properties on crystallite formation was determined. The initial stages of the growth of CdSe on ZnSe as well as ZnSe and PbS crystallite growth and layer formation on a Si substrate were investigated by ESCA or AFM and by the influence of clusters on the recombination of non-equilibrium carriers in substrates. The atom behavior on a terrace-step surface was analyzed and a few cases were simulated within the framework of the density-functional theory. The terrace step on Si (111) relaxation and preferred sites of Se adsorption were calculated from potential energy surfaces seen by adatoms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::87c0420eb880842f74f55c513aea1d49 https://doi.org/10.1016/s0026-2692(98)00131-1 Zobrazit plný text záznamu Full Text from ScienceDirect