Toward accurate composition analysis of GaN and AlGaN using atom probe tomography
| Autor: | Davit Melkonyan, Paul van der Heide, Wilfried Vandervorst, Ming Zhao, Claudia Fleischmann, Richard J. H. Morris, Ramya Cuduvally, L. Arnoldi |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
02 engineering and technology Atom probe 01 natural sciences Dissociation (chemistry) law.invention law 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Instrumentation Scaling 010302 applied physics business.industry Process Chemistry and Technology Semiconductor device 021001 nanoscience & nanotechnology Laser Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wavelength Optoelectronics Sublimation (phase transition) 0210 nano-technology business Stoichiometry |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:03F130 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.5019693 |
| Popis: | With scaling of semiconductor devices showing no signs of abating and three-dimensional structures now being developed, new metrologies to meet these demands are being sought. Atom probe tomography offers the potential to meet these challenges, and here, the authors present an in-depth study focused on finding useable conditions for accurate stoichiometric analysis of GaN and AlGaN. By varying the laser energy/power, changes in the average tip field were induced, and the resulting impact on the measured stoichiometry was investigated. A strong variation in the GaN stoichiometry as a function of the average tip field was found, although a range of conditions that enable accurate stoichiometry were determined. Moreover, the stoichiometric variation as a function of tip field was highly reproducible across instruments and laser wavelengths. However, for AlGaN, the N concentration was always underestimated. To try and establish the underlying cause of the N underestimation, potential loss mechanisms which include N2 sublimation, N2 neutral generation from molecular ion dissociation, and differences in the field of evaporation between the matrix elements and multihits were considered and are reported herein. |
| Databáze: | OpenAIRE |
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