Micromachined probes with integrated GaAs Schottky diodes for on-wafer temperature sensing
Autor: | Matthew F. Bauwens, Robert M. Weikle, Linli Xie, N. Scott Barker, Michael E. Cyberey, Christopher M. Moore, Noah Sauber, Arthur W. Lichtenberger, Souheil Nadri |
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Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Fabrication business.industry 020208 electrical & electronic engineering Schottky diode 02 engineering and technology 01 natural sciences Temperature measurement Gallium arsenide Surface micromachining chemistry.chemical_compound chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Wafer testing Optoelectronics Medicine Wafer business Diode |
Zdroj: | I2MTC |
DOI: | 10.1109/i2mtc.2018.8409690 |
Popis: | The design and fabrication process for implementing a proof-of-concept on-wafer probe with integrated diode temperature sensor is reported. The sensor consists of a wafer probe fabricated from high-resistivity silicon using micromachining techniques. The temperature sensing element is a GaAs Schottky diode that is integrated with the probe through an epitaxy transfer process that utilizes SU-8 as a bonding agent. Design of the probe as well as fabrication and measurement of prototype diodes for the temperature sensor are described. |
Databáze: | OpenAIRE |
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