Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs
| Autor: | P. Caubet, P. Normandon, C. Leroux, Mickael Gros-Jean, Gerard Ghibaudo, Roland Pantel, R.A. Bianchi, R. Boujamaa, S. Baudot, S. Zoll, Magali Gregoire |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage chemistry.chemical_compound Lanthanum oxide chemistry Gate oxide Physical vapor deposition MOSFET Optoelectronics Electrical and Electronic Engineering business Layer (electronics) NMOS logic High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 88:569-572 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2010.06.016 |
| Popis: | The MOSFET gate length reduction down to 32nm requires the introduction of a metal gate and a high-K dielectric as gate stack, both stable at high temperature. Here we use a nanometric layer of Lanthanum to shift the device threshold voltage from 500mV. Because this layer plays a key role in the device performance and strongly depends on its deposition process, we have compared two LaO"x deposition methods in terms of physical properties and influence on electrical NMOS device parameters. Chemical characterizations have shown a different oxidization state according to Lanthanum thickness deposited. It has been related to threshold voltage shift and gate leakage current variations on NMOS transistors. Furthermore mobility extractions have shown that Lanthanum is a cause of mobility degradation. |
| Databáze: | OpenAIRE |
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