Theoretical electronic band structures and transport in InAs/GaSb type II nanostructure superlattice for medium infrared detection
| Autor: | Driss Barkissy, Samir Melkoud, Es-saïd Es-Salhi, Abderrazak Boutramine, Nassima Benchtaber, Merieme Benaadad, Rachid Ben koujane, Abdelhakim Nafidi |
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| Rok vydání: | 2020 |
| Předmět: |
Nanostructure
Materials science Condensed matter physics Band gap business.industry Superlattice Fermi energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Effective mass (solid-state physics) Semiconductor Density of states Electronic band structure business |
| Zdroj: | Materials Today: Proceedings. 22:41-44 |
| ISSN: | 2214-7853 |
| DOI: | 10.1016/j.matpr.2019.08.069 |
| Popis: | We report here the electronic band structure of nanostructure type II superlattice (SL) InAs(d1 = 21 A)/GaSb(d2 = 24 A) performed in the envelope function formalism. We calculated the energy E(d1), E(kz), E(kp) and the effective mass in the direction of growth kz and in plane kp of the SL. When the temperature increases, the band gap Eg decreases and the corresponding cutoff wavelength λc increases. We interpreted photoluminescence and transport measurements of Haugan et al. with an agreement in the calculated gaps. The computed density of states and Fermi energy position indicated that the sample is a p type semiconductor with a transition from bi-dimensional to tri-dimensional conductivity near 20 K. This sample is medium infrared detector (3.92 μm |
| Databáze: | OpenAIRE |
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