Exact solutions of the extended spin field-effect transistor
| Autor: | Ri-Xing Wang, Yun-Chang Xiao, Ru-Shu Yang |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Physics
Coupling Condensed matter physics Transistor Conductance Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics law.invention Intensity (physics) Transmission (telecommunications) law General Materials Science Field-effect transistor Electrical and Electronic Engineering Spin-½ |
| Zdroj: | Superlattices and Microstructures. 73:322-329 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2014.05.035 |
| Popis: | Transmission oscillations of the ballistic spin transport through an extended spin field-effect transistor (SFET) are investigated. To the system of the normal incident electrons passing through the SFET between two normal leads, the transmission coefficients and the corresponding Landauer–Buttiker conductance can be obtained analytically. From the results it can directly find that the transport properties are obviously modulated by the spin of the incident electrons, the type and intensity of the spin–orbit coupling, the potentials strength, as well as the width of the SFET. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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