Development and applications of a beam energy filter for the PI9200XJ high current implanter
Autor: | George T. Lecouras, T. Marin, Walter J. Wriggins, Wendell Boyd, Norman L. Turner, D. Wagner, Babak Adibi, Ronald J. Macklin |
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Rok vydání: | 1993 |
Předmět: | |
DOI: | 10.1016/b978-0-444-89994-1.50129-0 |
Popis: | A reversed bias filter and enhanced post-acceleration electrodes have been developed for the PI9200XJ high current implanter to reduce the ion beam energy contamination. The use of the energy filter for 49 BF 2 implants reduces the atomic concentration of the dissociated fast boron to less than 0.1% of the peak atomic concentration of the boron from 49 BF 2 . |
Databáze: | OpenAIRE |
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