Electroforming and bipolar resistive switching in Si-SiO2-V2O5-Au binary oxide structure

Autor:	Alexander Pergament, Andrei Velichko, N. A. Kuldin, G. B. Stefanovich, V. V. Putrolainen, P. P. Boriskov
Rok vydání:	2015
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Oxide chemistry.chemical_element Radius Conductivity chemistry.chemical_compound chemistry Sputtering Modulation Electroforming Optoelectronics business Layer (electronics)
Zdroj:	Technical Physics Letters. 41:672-675
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785015070287
Popis:	We have studied bipolar resistive switching (BRS) with memory in a binary oxide structure Si-SiO2-V2O5-Au manufactured by reactive magnetron sputtering. A physical model is proposed that explains the formation of a BRS structure with a nanosized silicon channel in SiO2 and reversible modulation of conductivity in thin V2O5 layer at the channel boundary. The radius of this silicon channel is found from calculations based on the heat equation and atomic force microscopy data.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::87869177364c0e72a36983524e77f512 https://doi.org/10.1134/s1063785015070287 Zobrazit plný text záznamu Plný text ve formátu PDF