Etching Characteristics of VO2Thin Films Using Inductively Coupled Cl2/Ar Plasma
| Autor: | Nam-Ki Min, Yong-Hyun Ham, Alexander Efremov, Kwang-Ho Kwon, Sun Jin Yun, Hyun Woo Lee |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Plasma etching
Physics and Astronomy (miscellaneous) Plasma parameters Chemistry technology industry and agriculture General Engineering Analytical chemistry General Physics and Astronomy Plasma symbols.namesake Etching (microfabrication) symbols Langmuir probe Plasma diagnostics Inductively coupled plasma Plasma processing |
| Zdroj: | Japanese Journal of Applied Physics. 48:08HD04 |
| ISSN: | 1347-4065 0021-4922 |
| Popis: | A study on both etching characteristics and mechanism of VO2 thin films in the Cl2/Ar inductively coupled plasma was carried. The variable parameters were gas pressure (4–10 mTorr) and input power (400–700 W) at fixed bias power of 150 W and initial mixture composition of 25% Cl2 + 75% Ar. It was found that an increase in both gas pressure and input power results in increasing VO2 etch rate while the etch selectivity over photoresist keeps a near to constant values. Plasma diagnostics by Langmuir probes and zero-dimensional plasma model provided the data on plasma parameters, steady-state densities and fluxes of active species on the etched surface. The model-based analysis of the etch mechanism showed that, for the given ranges of operating conditions, the VO2 etch kinetics corresponds to the transitional regime of ion-assisted chemical reaction and is influenced by both neutral and ion fluxes with a higher sensitivity to the neutral flux. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|