| Autor: |
Wei Zhang, Xiaowei Zhou, Jincheng Zhang, Ziyang Liu, JunShuai Xue, Yue Hao, Yue Zhang |
| Rok vydání: |
2012 |
| Předmět: |
|
| Zdroj: |
Chinese Physics B. 21:077103 |
| ISSN: |
1674-1056 |
| Popis: |
An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 1019 cm−3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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